Electronic Devices & Circuits

Electronic Devices and Circuits

EG 2108 EX

                                                                                                                        Total: 8 hour /week

Year:  II                                                                                                         Lecture: 4 hours/week 

Semester:  III                                                                                                 Tutorial: 1 hours/week

Lab: 3 hours/week

CourseDescription:
This course deals with different electronic devices and circuits. 

Course Objectives:

On completion of this course the students will be able to:

1.     Differentiate between passive and active components. 

2.     Identify the characteristics of passive and active components.

3.     Explain the working principles of various semiconductor devices, relate their characteristics and applications

4.     Explain the characteristics of CB, CE and CC configuration circuits

5.     Explain the function of different dc power supplies.

6.     Explain the function of JFET, MOSFET

7.     Explain the function of SCR, PUT, UJT , special diodes and wave generating circuits

Course Contents:

Units	Topics	Contents	Hours	Methods/ Media	Marks
1	History of electronic devices	1.1 Electron vacuum tubes:  1.2 Diode,  1.3 Triode and Pentode:	2 hrs
2	Basic Passive Devices: R, C and L:	2.1 Construction, 2.2 Types,  2.3 Color coding  2.4 Characteristics	4 hrs
3	Semiconductor Diodes:	3.1 Energy levels, valence and conduction bands, conduction of electrons and holes. 3.2 Intrinsic and extrinsic semiconductor devices (Si), impurities, doping, majority and minor charge carries in P – type and N – type materials.. 3.3 PN Junction and depletion layer and potential barrier – definition and characteristics. 3.4 Forward and reverse biasing of PN junction diode – The V-I	10 hrs

Units	Topics	Contents	Hours	Methods/ Media	Marks
		characteristic, principles of operation, and effects of temperature and junction capacitance. 3.5 Analysis of PN junction diode circuit:  The V-I characteristic and mathematical expressions with equivalent model circuit diagrams. 3.6 Operation in the reverse breakdown region- Zener diode, principles of operation and IV characteristic.
4	Power Supplies:	4.1 Half wave and full wave rectifiers – Types, working principles, characteristics and applications. 4.2 Analysis of simple DC voltage power supplies – Principles, characteristics and ripple (voltages) factors. 4.3 Simple voltage regulation using Zener diodes – Principles, circuits, characteristics and application.	6 hrs
5	Bipolar Junction Transistors (npn and pnp) – Types, construction, working principle as an amplifier and characteristics:	5.1 The Unbiased Transistor, The Biased Transistor, Transistor Currents, The CE Connection, The base Curve, Collector Curves,     BJT AC Models: Base-Biased Amplifier, Emitter-Biased Amplifier, Small Signal operation, AC Beta, AC Resistance of the Emitter Diode, Reading Data Sheets 5.2 Other characteristics of BJT – The load line, operating point, Saturation and cutoff modes: Definition, circuits, principles and characteristics. 5.3 CC and CB Amplifier: CC Amplifier, Output Impedance, Cascading CE and CC, Darlington Connections, Voltage Regulation, The Common Base amplifier 5.4 Types of amplifier circuits: Class A, Class B, Class AB and Class C –	14hrs

Units	Topics	Contents	Hours	Methods/ Media	Marks
		Definition, characteristics and applications. 5.5 Frequency Effects: Frequency Response of an Amplifier, Decibel Power gain, Decibel voltage gain, Impedance matching,
6	Field Effect Transistor (JFET and MOSFETS) – Types, construction, working principles as an amplifier and characteristics:	6.1 Basic Ideas, Drain Curves, Tran conductance Curves, Biasing in Ohmic Region, Biasing in Active Region,  6.2 Saturation, cut off breakdown and ohmic regions of operation – analysis of  V-I characteristic curves. 6.3 The Depletion Mode MOSFET,D- MOSFET Curves, Depletion Mode MOSFET Amplifier, The Enhancement Mode MOSFET  6.4 Data Book	12hrs
7	Special Semiconductor Devices – Working principles, functional circuits, characteristics and applications:	7.1 UJT, PUT, SCR, Diar and Triac. 7.2 Photo voltaic effects and solar cells. 7.3 Photodiode, phototransistor, LED, LDR,   opt couplers and isolators. 7.4 Tunnel diode, schottyky diode, GaAs Transistors, MOSFET. 7.5 Charge coupled devices, Hall effects, solid state relay and thermister. 7.6 Multi vibrators: Generation of square and triangular wave forms using 555 IC	12hrs
Practical:		Demonstrate the following tasks:  1      Diode characteristics – PN diode and Zener diode 2      BJT characteristics – C.E. input and output characteristics 3      FET characteristics – C.S. input and output characteristics 4      HW and FW rectifier – waveforms and characteristics	45 hrs
Units	Topics	Contents	Hours	Methods/ Media	Marks
		5      UJT characteristics – IV characteristics 6      PUT characteristics – IV characteristics 7      SCR characteristics – IV characteristics 8      Tunnel diode characteristics – IV characteristics 9      Photo diode characteristics – IV characteristics

Reference books:

1. Theraja, B. L. (2010). Basic Electronics: Solid state. New Delhi: S. Chand & Company Ltd. 2. Sharma, S., & Sharma, D. (2010). Electronic principles. New Delhi: S.K. Kataria & Sons

3.     Floyd, T. L. (2005). Electronic devices. Upper Saddle River, N.J: Pearson Education.

4.     Malvino, A. P., & Bates, D. J. (2016). Electronic principles. New York: McGraw-Hill Education